Seminars and Events

Site-controlled growth of nanowires induced by focus ion beam

Date/Time: 05.11.2013. 11:20 a.m.
Place: Materials Day 2013, Ruhr-Universität Bochum, Bochum, Germany

Sven Scholz, Ruhr-Universität Bochum, Bochum, Rüdiger Schott, Ruhr-Universität Bochum, Bochum, Dirk Reuter, Ruhr-Universität Bochum, Bochum, Alfred Ludwig, Materials Research Department, Ruhr-Universität Bochum, Bochum, Andreas D. Wieck, Ruhr-Universität Bochum, Bochum

Semiconductor nanowires (NWs) are used as building blocks for a new generation of advanced devices intended for different applications in the field of nanoelectronics, nanophotonics and nanomechanics.

NWs are near one-dimensional structures that typically have a high length-to-width ratio. This is the foundation of fascinating structural properties. Heterostructures of highly lattice mismatched materials can be combined without dislocations and metastable phases, unattaninable in bulk materials like wurtzite GaAs, can be made.

We present focused ion beam (FIB) induced molecular beam epitaxy (MBE) grown single nanowires on GaAs (111)B substrates from site selectively deposited Au seeds.

Structural and optical properties of the nanowires are investigated by secondary electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL), respectively.

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