Full wafer property control of local droplet etched GaAs quantum dots

Babin, H.-G. and Bart, N. and Schmidt, M. and Spitzer, N. and Wieck, A.D. and Ludwig, Ar.

Volume: 591 Pages:
DOI: 10.1016/j.jcrysgro.2022.126713
Published: 2022

We present strategies for controlling growth parameters of local droplet etched GaAs quantum dots. We manage the local QD density and emission wavelength by gradient material deposition. We find regions with no light-emitting quantum dots sharply separated from regions with strong quantum dot luminescence. Close to this transition, we expect the lowest quantum dot densities possible under the used parameters. The maximum wavelength shift achieved due to a variation of GaAs hole filling level on a single 3-inch wafer ranges from 731 to 795 nm. By locally controlling the surface roughness, a profound additional influence on the emission wavelength and density is found. We show how to control this modulation on a millimeter-scale over the whole wafer. © 2022 Elsevier B.V.

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