Digital holography for spatially resolved analysis of the semiconductor optical response

Besaga, V.R. and Gerhardt, N.C. and Hofmann, M.R.

Volume: 60 Pages: A15-A20
DOI: 10.1364/AO.402488
Published: 2021

We present spatially resolved measurements of the below-band-gap carrier-induced absorption and concurrent phase change in a semiconductor with the help of transmission digital holography. The application is demonstrated for a bulk GaAs sample, while the holograms are recorded with a conventional CMOS sensor. We show that the phase information enables spatially resolved monitoring of excess carrier distributions. Based on that, we discuss a phase-based approach for separation of carrier and heat related effects in the semiconductor optical response. © 2020 Optical Society of America.

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