Charge tunable gaas quantum dots in a photonic n-i-p diode

Babin, H.G. and Ritzmann, J. and Bart, N. and Schmidt, M. and Kruck, T. and Zhai, L. and Löbl, M.C. and Nguyen, G.N. and Spinnler, C. and Ranasinghe, L. and Warburton, R.J. and Heyn, C. and Wieck, A.D. and Ludwig, Ar .

Volume: 11 Pages:
DOI: 10.3390/nano11102703
Published: 2021

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n-and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

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