Tuning the Mode Splitting of a Semiconductor Microcavity with Uniaxial Stress

Tomm, N. and Korsch, A.R. and Javadi, A. and Najer, D. and Schott, R. and Valentin, S.R. and Wieck, A.D. and Ludwig, Ar. and Warburton, R.J.

Volume: 15 Pages:
DOI: 10.1103/PhysRevApplied.15.054061
Published: 2021

A splitting of the fundamental optical modes in micro- and nanocavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays a role in light-matter interaction and hence quantum technology applications, a method for controlling the mode splitting is useful. In this work we use an open microcavity composed of a "bottom"semiconductor distributed Bragg reflector (DBR) incorporating a n-i-p heterostructure, paired with a "top"curved dielectric DBR. We measure the mode splitting as a function of wavelength across the stopband. We demonstrate a reversible in situ technique to tune the mode splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of approximately 11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode splitting and its tuning across the stopband leads to a quantitative understanding of the mechanism behind the results. © 2021 authors. Published by the American Physical Society.

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