Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

Durnev, M.V. and Glazov, M.M. and Linpeng, X. and Viitaniemi, M.L.K. and Matthews, B. and Spurgeon, S.R. and Sushko, P.V. and Wieck, A.D. and Ludwig, Ar. and Fu, K.-M.C.

Volume: 101 Pages:
DOI: 10.1103/PhysRevB.101.125420
Published: 2020

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-The-Art structural imaging coupled with density-functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system. © 2020 American Physical Society.

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