Excitons in InGaAs quantum dots without electron wetting layer states

Löbl, M.C. and Scholz, S. and Söllner, I. and Ritzmann, J. and Denneulin, T. and Kovács, A. and Kardynał, B.E. and Wieck, A.D. and Ludwig, Ar. and Warburton, R.J.

Volume: 2 Pages:
DOI: 10.1038/s42005-019-0194-9
Published: 2019

The Stranski–Krastanov growth-mode facilitates the self-assembly of quantum dots (QDs) by using lattice-mismatched semiconductors, for instance, InAs and GaAs. These QDs are excellent photon emitters: the optical decay of QD-excitons creates high-quality single-photons, which can be used for quantum communication. One significant drawback of the Stranski–Krastanov mode is the wetting layer. It results in a continuum close in energy to the confined states of the QD. The wetting-layer-states lead to scattering and dephasing of QD-excitons. Here, we report a slight modification to the Stranski–Krastanov growth-protocol of InAs on GaAs, which results in a radical change of the QD-properties. We demonstrate that the new QDs have no wetting-layer-continuum for electrons. They can host highly charged excitons where up to six electrons occupy the same QD. In addition, single QDs grown with this protocol exhibit optical linewidths matching those of the very best QDs making them an attractive alternative to conventional InGaAs QDs. © 2019, The Author(s).

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